DMN2004DWK
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SOT363
Dim
Min
Max
B C
A
B
C
0.10
1.15
2.00
0.30
1.35
2.20
D
0.65 Typ
H
F
H
0.40
1.80
0.45
2.20
K
M
J
K
L
0
0.90
0.25
0.10
1.00
0.40
J
D
F
L
M
α
0.10 0.22
0° 8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
C2
C2
Dimensions Value (in mm)
Z
G
2.5
1.3
Z
G
C1
X
Y
0.42
0.6
C1
1.9
Y
X
C2
0.65
DMN2004DWK
Document number: DS30935 Rev. 5 - 2
5 of 6
www.diodes.com
January 2014
? Diodes Incorporated
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相关代理商/技术参数
DMN2004K 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004K_10 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004K-7 功能描述:MOSFET 20V 540mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2004K-7-F 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:Product specification
DMN2004TK 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2004TK-7 功能描述:MOSFET 20V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2004VK 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2004VK_10 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR